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Conduction band break determination by terehertional pulse excitation spectroscopy

  • European Social Fund (ESF)
  • 1 Dec 2017 to 30 Nov 2018
  • Lithuania

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Operation co-funded by EU cohesion policy (European Social Fund (ESF)) under the programme EU Structural Funds Investments - LT - ERDF/ESF/CF/YEI (2014LT16MAOP001), managing authority: Finansų ministerija. The source names no beneficiary for this operation. Location: Vilnius County (NUTS LT011); Lithuania. Budget: total eligible expenditure EUR 53,813.76; EU co-financing EUR 53,813.76 (co-financing rate 100%), as stated by the source. Runs 2017-12-01 to 2018-11-30. Source: Kohesio, EU cohesion policy projects managed by national and regional authorities (not CORDIS); selected because its summary names quantum technology. Summary from Kohesio (English machine translation by the source): Most modern optoelectronic devices are made of different types of materials. In this type of joints, so-called conductivity and valent strip breaks occur. Thanks to them, quantum pits are formed and they form potential barriers for semiconductor chargers. Therefore, knowledge of these sizes is very important when designing semiconductor devices. The aim of this project is to develop a methodology that can determine the burst energy of the conductivity at the junction of two different semiconductors. Since THz impulse generation is heavily influenced by the semiconductor belt structure, various barriers and electric fields generated by the two-way interface, it can be used effectively for the research of semiconductors and their derivatives. This work will use the THz excitation spectroscopy method for the determination of the above mentioned amounts. Initially, the energy of the side valley of the conduction band and the conductivity band break in the THz excitation spectrum will be determined for the conduction of the conductivity band in high-thickness semiconductor layers. As the electrical fields in the sample are likely to significantly influence the results of the experiment, samples will be prepared at the next stage where the surface and heterosandure electric fields are minimal or their influence on the experimental results is small. This will lead to the next, last step, which will determine the breakage of the conductivity in the heterosandura of the substances to be tested and how this value depends on the amount of additional atoms.

Original source.

Source: Kohesio (EU cohesion policy projects), European Commission, Directorate-General for Regional and Urban Policy (DG REGIO). Retrieved 2026-10-21. Licence: CC0 1.0 (Cohesion Open Data Platform, dataset 2014-2020 Kohesio projects). Selected metadata, adapted presentation; the publisher's record is authoritative. No endorsement by the source is implied. Licence: public domain dedication (CC0 1.0).

AI-assisted summary: The project focuses on developing a methodology to determine the burst energy of conductivity at the junction of two different semiconductors, crucial for designing semiconductor devices. It was co-funded by the EU with a total budget of EUR 53,813.76. Suggested technology pillar: enabling. Generated by AI from the public source text; it may contain errors and the original source is authoritative.

Source: kohesio.ec.europa.eu · checked 21 Oct 2026 · AI-assisted summary