DefCom2D: Defect engineering in quantum memristors for neuromorphic computing

Project funded by Fundação para a Ciência e a Tecnologia, I.P. (FCT) (Concurso para Projetos Exploratórios no âmbito do Programa UT Austin Portugal 2024), grant 2024.12604.UTA. Funded amount: EUR 49,975, as stated by the source. Runs 2025-10-01 to 2026-09-30. Keywords: Resistive switching, in-memory computing, two-dimensional materials, hexagonal boron nitride, Exact sciences. Source: OpenAIRE Graph, from the funder's project data (collected by OpenAIRE on 2025-10-24); national funding data, not CORDIS. Abstract given by the source: Neuromorphic computing, inspired by the human brain’s unparalleled efficiency and adaptability, represents a transformative approach to addressing the limitations of conventional computing architectures. At the forefront of this paradigm, memristors—non-volatile resistive switching devices—have emerged as pivotal components due to their ability to emulate synaptic functions. Among various materials explored for memristor development, two-dimensional (2D) materials, particularly hexagonal boron nitride (hBN), have garnered significant attention for their unique properties, including quantum conductance effects, wide bandgap, and robust chemical stability. These characteristics make hBN an exceptional candidate for energy-efficient and scalable neuromorphic systems. Recent breakthroughs have demonstrated the potential of hBN-based memristors in enabling quantum conductance steps and hybrid volatile/non-volatile switching. These features allow precise synaptic weight modulation and emulate the short-term and long-term plasticity inherent to biological neural networks. While these studies underline the promise of hBN memristors, the role of defects—such as vacancies, grain boundaries, and edge states—in governing their resistive switching remains insufficiently explored. A systematic understanding of defect-mediated mechanisms is essential for optimizing device performance and transitioning these materials from proof-of-concept studies to practical applications. This project aims to advance defect-engineered quantum memristors for neuromorphic computing by addressing two primary objectives. First, we will investigate the role of defects in hBN memristors by employing argon plasma treatments to introduce controlled vacancies while also analyzing intrinsic defects present in CVD-grown hBN flakes. Through comprehensive characterization techniques, including electrical measurements, Raman spectroscopy, and X-ray photoelectron spectroscopy, we will correlate defect type and [shortened; the full text is on the OpenAIRE page]

Original source.

Source: OpenAIRE Graph: projects of national funders, OpenAIRE, from the project data of Fundação para a Ciência e a Tecnologia, I.P. (FCT). Retrieved 2026-10-28. Licence: Creative Commons Attribution 4.0 (OpenAIRE Graph). Selected metadata, adapted presentation; the publisher's record is authoritative. No endorsement by the source is implied. Licence: Creative Commons Attribution 4.0 (CC BY 4.0).

AI-assisted summary: DefCom2D is a project funded by FCT with a grant of EUR 49,975, running from 2025-10-01 to 2026-09-30. It focuses on defect engineering in quantum memristors for neuromorphic computing, utilizing two-dimensional materials like hexagonal boron nitride. Suggested technology pillar: computing. Generated by AI from the public source text; it may contain errors and the original source is authoritative.