Functional Plate Gallium Shadow-Oxide and Zinc Gallate thin layers and New Deposition Technologies

Operation co-funded by EU cohesion policy (European Regional Development Fund (ERDF)) under the programme Growth and Employment - LV - ERDF/ESF/CF/YEI (2014LV16MAOP001), managing authority: FM. The source names no beneficiary for this operation. Location: Riga (NUTS LV006); Latvia. Budget: total eligible expenditure EUR 537,004.6; EU co-financing EUR 441,901.08 (co-financing rate 82.29%), as stated by the source. Runs 2021-01-01 to 2023-06-30. Source: Kohesio, EU cohesion policy projects managed by national and regional authorities (not CORDIS); selected because its summary names quantum technology. Summary from Kohesio (English machine translation by the source): Gallium oxide Ga2O3 is now one of the most researched materials. Almost any issue related to material science contains articles on the cultivation of gallium oxide, the properties of the material, or the use of its appliances. The great interest is due to the extremely promising properties of this wide restricted area material in electronic and optical applications, together with relatively inexpensive base materials. Most recently, it has been shown that wide-zone spinel zinc gallate ZnGa2O4 has several advantages over gallium oxide that should be studied in greater depth.The aim of this industrial research project is to develop modern high application rate PVD magnetron dusting and MOCVD technologies to apply functional ultra-wide restricted zone gallium oxide GaO3 and zinc gallate ZnGa2O4 thin layers and applications of optical electronics. The main tasks are:•Develop high-speed PVD magnetron dusting technology to apply clean and alloyed (p-type hollows and RE) amorphous and crystalline gallium oxide Ga2O3 thin sheets and ZnGa2O4 thin sheets. The main applications are (1) deep-UV (DUV) transparent electroconductive oxides (TCOs) and (2) effective inorganic fluorescent devices.•Develop Ga2O3 and ZnGa2O4 thin film coating technology with MOCVD and develop epitaxial n- and p-type Ga2O3 and ZnGa2O4 thin thin layers technology with MOCVD and develop epitaxial n- and p-type Ga2O3 and ZnGa2O4 thin layer coating processes with MOCVD and develop epitaxial n- and p-type Ga2O3 and ZnGa2O4 thin layer coating processes with MOCVD and industrial solutions for SIA BOOO. This cross-disciplinary project consists of studies in physics and chemistry sciences (1.3, 1.4.) and material engineering (2.5).Project products:New high-speed PVD magnetron dusting technology with crystalline and amorphous Ga2O3 and ZnGa2O-Mine-Moderal Promote, Optical Applications on Different Footprints to develop DUV TCOs and effective non-organic luminous devices, and ZnGO in the direction of [shortened; the full text is on the Kohesio page]

Original source.

Source: Kohesio (EU cohesion policy projects), European Commission, Directorate-General for Regional and Urban Policy (DG REGIO). Retrieved 2026-10-21. Licence: CC0 1.0 (Cohesion Open Data Platform, dataset 2014-2020 Kohesio projects). Selected metadata, adapted presentation; the publisher's record is authoritative. No endorsement by the source is implied. Licence: public domain dedication (CC0 1.0).

AI-assisted summary: The project focuses on Gallium Shadow-Oxide and Zinc Gallate thin layers, co-funded by the EU with a budget of EUR 537,004.6, running from January 2021 to June 2023 in Riga, Latvia. It highlights the promising properties of gallium oxide in electronic and optical applications. Suggested technology pillar: enabling. Generated by AI from the public source text; it may contain errors and the original source is authoritative.