GASIOPHE: Growth of nonpolar and semipolar GaN on Silicon and sapphire substrates and investigation of optical processes for high efficiency

Project funded by French National Research Agency (ANR) (ANR science directorate (DGDS), programme Blanc International I, call 2012), research institution: Laboratoire Charles Coulomb; Virginia Commonwealth University. ANR aid allocated: EUR 275,545, as stated by the source. Runs 2012-12-01 to n/a. Source: ANR funded projects (data.gouv.fr) (national funding data, not CORDIS).

Original source.

Source: ANR funded projects (data.gouv.fr), French National Research Agency (Agence nationale de la recherche, ANR). Retrieved 2026-10-24. Licence: Open Database Licence (ODbL) 1.0: ANR, data.gouv.fr; shared alike. Selected metadata, adapted presentation; the publisher's record is authoritative. No endorsement by the source is implied. Contains Open data of the French National Research Agency (ANR) on data.gouv.fr (ANR, data.gouv.fr, ODbL 1.0, https://opendatacommons.org/licenses/odbl/1-0/); a database that includes this data is shared under the ODbL. Licence: Open Database Licence (ODbL 1.0).

AI-assisted summary: The GASIOPHE project, funded by the French National Research Agency, focuses on the growth of nonpolar and semipolar GaN on silicon and sapphire substrates. It is conducted by Laboratoire Charles Coulomb and Virginia Commonwealth University, with funding of EUR 275,545. Suggested technology pillar: enabling. Generated by AI from the public source text; it may contain errors and the original source is authoritative.