GraphSiC: Epitaxial graphene on SiC: from advanced material to quantum coherence

Project funded by French National Research Agency (ANR), grant ANR-07-BLAN-0161. Participating organisations named by the source: Commissariat à l’énergie atomique et aux énergies alternatives; Soleil Synchrotron; CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE - DELEGATION REGIONALE LANGUEDOC-ROUSSILLON and 2 more. Funded amount: EUR 439,981, as stated by the source. Runs 2008-01-11 to n/a. Source: OpenAIRE Graph, from the funder's project data (collected by OpenAIRE on 2026-07-23); national funding data, not CORDIS. Abstract given by the source: Graphene (a single atomic plane of graphite) shows appealing transport properties: high carrier mobility, high current density, long mean free path and phase coherence length. Recently, quantum hall effect has been observed in this material (up to room temperature!). Therefore, graphene is an exciting material for physical studies and it is considered as a promising material for future electronics. There are basically two techniques for fabricating this material: exfoliation of graphite and sublimation of SiC. In both cases, the graphene layer(s) is (are) supported on a substrate which is likely to influence its physical properties (due e.g. to some charge transfer at the interface, or to the presence of interface defects). Up to now, the role of the substrate on the properties of graphene has not been thoroughly investigated. This is a crucial issue and the main objective of this proposal. The sublimation technique allows the fabrication of epitaxial graphene of macroscopic size which are well suited to perform detailed analysis using powerful (surface) characterization techniques (at variance with exfoliated graphene). Moreover the interface with the substrate is in principle more reproducible and tunable than the one involved in exfoliated graphite. This is why we have chosen this approach to prepare graphene. This project aims at investigating the structural and electronic structure of epitaxial graphene in connexion with the transport properties. We shall concentrate in the few layers range (few layers graphene: FLG's), where the most original properties are expected. The experimental effort will be supported by theoretical works addressing the same issues as the experimental ones: atomic and electronic structures as well as transport properties on realistic systems. We shall use surfaces of different polytypes to create FGL's by sublimation in order to analyze the role of the substrate. Apart from the classical hexagonal (4H and 6H) polytypes (with two [shortened; the full text is on the OpenAIRE page]

Original source.

Source: OpenAIRE Graph: projects of national funders, OpenAIRE, from the project data of French National Research Agency (ANR). Retrieved 2026-10-22. Licence: Creative Commons Attribution 4.0 (OpenAIRE Graph). Selected metadata, adapted presentation; the publisher's record is authoritative. No endorsement by the source is implied. Licence: Creative Commons Attribution 4.0 (CC BY 4.0).

AI-assisted summary: The GraphSiC project, funded by the French National Research Agency with EUR 439,981, focuses on epitaxial graphene on SiC from 2008. It involves organizations like Commissariat à l’énergie atomique et aux énergies alternatives and explores graphene's transport properties. Suggested technology pillar: enabling. Generated by AI from the public source text; it may contain errors and the original source is authoritative.