Influence of heating directly on Si(100) synthesised graphene structure

Operation co-funded by EU cohesion policy (European Social Fund (ESF)) under the programme EU Structural Funds Investments - LT - ERDF/ESF/CF/YEI (2014LT16MAOP001), managing authority: Finansų ministerija. The source names no beneficiary for this operation. Location: Kauno apskritis (NUTS LT022); Lithuania. Budget: total eligible expenditure EUR 1,877.93; EU co-financing EUR 1,877.93 (co-financing rate 100%), as stated by the source. Runs 2019-07-01 to 2019-08-31. Source: Kohesio, EU cohesion policy projects managed by national and regional authorities (not CORDIS); selected because its summary names quantum technology. Summary from Kohesio (English machine translation by the source): The most famous 2D nanomaterial, graphene, is characterised by enormous agile electrons and holes, charger multiplication, topological energy tape engineering and quantum interference, flexibility, transparency, and chemical inertia. Among the many applications available, graphene is also being used for the production of a variety of ultra-fast electronic devices and ultra-sensitivity photo sensors. Graphene is grown on Cu or Ni foil or extrafoliated. A long process of transporting graphene to a semiconductor or dielectric surface continues. It is a complicated and complex technology that makes it very difficult to control the intermediate contact properties of graphene/semiconductor (dielectric) and, at the same time, the performance characteristics of a semiconductor device. Recently, it has been shown that the graphene layer can be raised directly on dielectric or semiconductor substrates using plasma activated chemical vapour deposition. However, so far, these technologies are in the beginning. In this way, graphene synthesised is characterised by a high density of structural defects. These defects, in turn, reduce the mobile graphene of the chargers and increase the specific resistance of graphene. This work will try to reduce the density of defects in the directly synthesised graphene by additional heating of graphene in various environments after cultivation. The influence of heating on sample structure and thickness of graphene layers will be studied by Raman dispersion spectroscopy and measurement of the reflection spectrum. The aim of the project is to study the influence of heating on the structure of graphene produced directly on Si(100) by plasma activated chemical vapour deposition directly on Si(100).

Original source.

Source: Kohesio (EU cohesion policy projects), European Commission, Directorate-General for Regional and Urban Policy (DG REGIO). Retrieved 2026-10-21. Licence: CC0 1.0 (Cohesion Open Data Platform, dataset 2014-2020 Kohesio projects). Selected metadata, adapted presentation; the publisher's record is authoritative. No endorsement by the source is implied. Licence: public domain dedication (CC0 1.0).

AI-assisted summary: The operation, co-funded by the EU cohesion policy, focuses on the influence of heating on Si(100) synthesized graphene structure in Kauno apskritis, Lithuania, with a total budget of EUR 1,877.93 from EU co-financing. It ran from July 1 to August 31, 2019. Suggested technology pillar: sensing. Generated by AI from the public source text; it may contain errors and the original source is authoritative.