Influence of point defects on InGaN quantum well decomposition in technology of blue/green laser diodes and LEDs

Operation co-funded by EU cohesion policy (European Regional Development Fund (ERDF)) under the programme Smart growth - PL - ERDF (2014PL16RFOP001), managing authority: Ministerstwo obsługujące ministra właściwego ds. rozwoju regionalnego. The source names no beneficiary for this operation. Location: Trójmiejski (NUTS PL633); Poland. Budget: total eligible expenditure EUR 770,148.35; EU co-financing EUR 770,148.35 (co-financing rate 100%), as stated by the source. Runs 2017-09-01 to 2021-05-29. Source: Kohesio, EU cohesion policy projects managed by national and regional authorities (not CORDIS). Summary from Kohesio (English machine translation by the source): In the Project, we will explain the role of point defects (mainly Ga vacancies and hydrogen Impurity) in decomposition of InGaN quantum wells. This decomposition occurs during growth of p-type GaN above these wells in LEDs and laser diodes (LDs) emitting in blue/green spectral range, and is one of the main reasons why the efficiencies of green emitters have low efficiencies (“green gap”). In our recent research, we got for the first time indications that the InGaN decomposition is caused by strain-driven diffusion of point defects. To understand this phenomenon, we are planning to do a number of experiments changing growth parameters (doping, flows of reactants, pressure, temperature, etc) in epitaxial growth, as well as to do theoretical modelling of point defect and indium diffusion. The samples will be examined using a number of techniques in collaboration with other labs. As a result, we should find the way of avoiding the InGaN decomposition in LEDs and LDs.

Original source.

Source: Kohesio (EU cohesion policy projects), European Commission, Directorate-General for Regional and Urban Policy (DG REGIO). Retrieved 2026-10-21. Licence: CC0 1.0 (Cohesion Open Data Platform, dataset 2014-2020 Kohesio projects). Selected metadata, adapted presentation; the publisher's record is authoritative. No endorsement by the source is implied. Licence: public domain dedication (CC0 1.0).

AI-assisted summary: The project investigates the impact of point defects on the decomposition of InGaN quantum wells in blue/green laser diodes and LEDs. It is co-funded by the EU with a total budget of EUR 770,148.35, running from September 2017 to May 2021. Suggested technology pillar: sensing. Generated by AI from the public source text; it may contain errors and the original source is authoritative.