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inGeQT: Semiconductor quantum technology based on industrial-grade Ge quantum materials

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  • French National Research Agency (ANR)
  • 1 Oct 2024
  • France

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Project funded by French National Research Agency (ANR) (ANR science directorate (DGDS), programme ANR - JST CREST, call 2024), research institution: Laboratoire d'Electronique et de Technologie de l'Information; Institut de Recherche Interdisciplinaire de Grenoble; Institut Néel. ANR aid allocated: EUR 591,605.47, as stated by the source. Runs 2024-10-01 to n/a. Source: ANR funded projects (data.gouv.fr) (national funding data, not CORDIS).

Original source.

Source: ANR funded projects (data.gouv.fr), French National Research Agency (Agence nationale de la recherche, ANR). Retrieved 2026-10-24. Licence: Open Database Licence (ODbL) 1.0: ANR, data.gouv.fr; shared alike. Selected metadata, adapted presentation; the publisher's record is authoritative. No endorsement by the source is implied. Contains Open data of the French National Research Agency (ANR) on data.gouv.fr (ANR, data.gouv.fr, ODbL 1.0, https://opendatacommons.org/licenses/odbl/1-0/); a database that includes this data is shared under the ODbL. Licence: Open Database Licence (ODbL 1.0).

AI-assisted summary: The inGeQT project focuses on semiconductor quantum technology using industrial-grade Ge quantum materials and is funded by the French National Research Agency with an allocation of EUR 591,605.47. It involves multiple research institutions and runs from October 1, 2024. Suggested technology pillar: enabling. Generated by AI from the public source text; it may contain errors and the original source is authoritative.

Source: doi.org · checked 24 Oct 2026 · AI-assisted summary