NEW ARCHITECTURES BASED ON NANOSSTRUCTURES WITH SB FOR HIGH EFFICIENCY PHOTOVOLTACI APPLICATIONS

Operation co-funded by EU cohesion policy (European Regional Development Fund (ERDF)) under the programme Multi-regional Spain - ERDF (2014ES16RFOP002), managing authority: Subdirección General de Gestión del FEDER, de la Dirección General de Fondos Europeos del Ministerio de Hacienda.. The source names no beneficiary for this operation. Location: Cádiz Province (NUTS ES612); Spain. Budget: total eligible expenditure EUR 90,750; EU co-financing EUR 72,600 (co-financing rate 80%), as stated by the source. Runs 2016-12-30 to 2020-12-31. Source: Kohesio, EU cohesion policy projects managed by national and regional authorities (not CORDIS); selected because its summary names quantum technology. Summary from Kohesio (English machine translation by the source): THIRD GENERATION SOLAR CELLS (SC) ARE BEING INVESTIGATED AS THE MAIN ROUTE TO HIGH-EFFICIENCY PHOTOVOLTAIC ENERGY. LIMITATIONS IN THE MAIN APPROACHES, SUCH AS MULTIUNION SC (MJSC) OR INTERMEDIATE BAND (IBSC), ARE DUE TO THE LACK OF MATERIALS AND NANOSTRUCTURES WITH THE REQUIRED BAND PROPERTIES AND STRUCTURE. THIS CURRENTLY PREVENTS THE DEVELOPMENT OF MJSCS AND IBSCS, AS WELL AS OF A UNION SC (SJSC), WITH THE DESIGNS WE OPTED FOR. WE PROPOSE A NEW CLASS OF NANOSTRUCTURES BASED ON (AL)GAASSB(N) AND FLOODS ON GAAS THAT COULD SIGNIFICANTLY IMPROVE THESE DEVICES, AS THEY ALLOW THE ENGINEERING OF BAND STRUCTURE IN THE NANOSCALE WITH UNPRECEDENTED FREEDOM, AS WELL AS THE COMPENSATION OF TENSIONS. WHILE THE INCORPORATION OF N IN GAASSB ALLOWS THE RETICULAR ADJUSTMENT WITH THE GAAS AND AN INDEPENDENT MANIPULATION OF THE OFFSETS OF THE DRIVING BANDS AND VALENCIA, ADDING TO THE FACILITATES A MUCH GREATER RANGE OF VARIATION OF THE OFFSET AND THE SEGREGATION OF SB COULD BE REDUCED. Our OBJECTIVE IS USE THESE UNIQUE CHARACTERISTICS to produce nanostructured SOLAR CELULS WITH OPTIMAL DESIGNS. BETWEEN SJSC, BASATES IN GAAS have a VERY CONVERTION EFICIENCE OF OTHER MATERIALS. ITS EFFICIENCY COULD BE IMPROVED BY ADDING INAS/GAAS TYPE I QUANTUM POINTS (QD) WITH (AL)GAASSBN COATING LAYERS, WHICH COULD SOLVE THE TWO PROBLEMS PRESENT IN QDS SCS: THE ACCUMULATION OF TENSION AND REDUCTION OF THE VOC. IN TURN, SUCH STRUCTURES CAN BE INCORPORATED INTO THE GAA SUBCELULA IN MJSC FOR CURRENT COUPLING. IN ADDITION, THE GROWTH OF QUANTUM WELL STRUCTURES (QW) OR GAAS(SB)(N) SUPERNETS RETICULARLY ADJUSTED TO THE GAAS COULD BE USED AS SUBCELLULES AT 1.0 OR 1.15 EV IN MJSC, PROVIDING OPTIMAL ENERGIES AND PRESENTING POTENTIAL ADVANTAGES OVER THICK LAYERS. FINALLY, THE APPROPRIATE DESIGN IN IBSCS CAN BE ACHIEVED USING TYPE II NANOSTRUCTURES, SUCH AS INAS/GAAS QDS WITH (AL)GAASSB(N) CL WITH HIGH SB CONTENT OR GAASN/ALGAASSB TYPE II QWS. These STRUCTURES CAN INCREMENT PROCESSES OF PHOTONS ABSORCTION IN [shortened; the full text is on the Kohesio page]

Original source.

Source: Kohesio (EU cohesion policy projects), European Commission, Directorate-General for Regional and Urban Policy (DG REGIO). Retrieved 2026-10-21. Licence: CC0 1.0 (Cohesion Open Data Platform, dataset 2014-2020 Kohesio projects). Selected metadata, adapted presentation; the publisher's record is authoritative. No endorsement by the source is implied. Licence: public domain dedication (CC0 1.0).

AI-assisted summary: The project focuses on investigating third generation solar cells to enhance photovoltaic energy efficiency, addressing material limitations in existing approaches. It is co-funded by the EU with a budget of EUR 90,750, running from 2016 to 2020 in Cádiz Province, Spain. Suggested technology pillar: enabling. Generated by AI from the public source text; it may contain errors and the original source is authoritative.