Nonpolar III-nitride quantum structures foe advanced ligth emitting devices

Project funded by Swedish Research Council (Project grant), grant 2009-04991_VR. Participating organisations named by the source: Linköping University. Funded amount: SEK 2,364,000, as stated by the source. Runs 2010-01-01 to 2012-12-31. Keywords: Oklassificerat, Unclassified. Source: OpenAIRE Graph, from the funder's project data (collected by OpenAIRE on 2025-12-06); national funding data, not CORDIS. Abstract given by the source: Within this project we intend to explore the potential of group-III nitrides grown along nonpolar crystallographic directions for a new generation of light emitting devices in the UV and visible spectral region. Nonpolar growth approach is expected to be ultimate solution of the long lasting problem with the strong polarization field in nitride-based quantum well structures and to benefit developing of high-brightness light emitting diodes (LED) and low-threshold laser diodes (LD). By employing a variety of structural and optical characterization techniques (XRD, TEM, CL, PL, TRPL) we will examine (i) nonpolar GaN layers grown by different lateral epitaxial overgrowth (LEO) techniques in order to establishing the best approach for producing low-defect density templates for subsequent growth of high-quality LED structures, and (ii) nonpolar InGaN/GaN quantum wells (QWs) aiming on an improved internal quantum efficiency of the emission for higher In content and wider QWs, i.e. for operation at longer wavelengths. Our main goal will be to gain knowledge about fundamental optical properties of nonpolar quantum structures, as well as to examine some specific technological issues in growth of nonpolar nitrides such as extended defect reduction, n- and p-type doping, In and Al incorporation. The obtained results will be of significant importance for the design, modeling and practical realization of new types (In, Al, Ga)N-based emitters for solid-state lighting.

Original source.

Source: OpenAIRE Graph: projects of national funders, OpenAIRE, from the project data of Swedish Research Council. Retrieved 2026-10-28. Licence: Creative Commons Attribution 4.0 (OpenAIRE Graph). Selected metadata, adapted presentation; the publisher's record is authoritative. No endorsement by the source is implied. Licence: Creative Commons Attribution 4.0 (CC BY 4.0).

AI-assisted summary: The project "Nonpolar III-nitride quantum structures for advanced light emitting devices" was funded by the Swedish Research Council with a grant of SEK 2,364,000, running from 2010 to 2012. It aims to explore nonpolar group-III nitrides for improved light emitting devices. Suggested technology pillar: sensing. Generated by AI from the public source text; it may contain errors and the original source is authoritative.