Novel InSb quantum dots monolithically grown on silicon for low cost mid-infrared light emitting diodes

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UK Research and Innovation (UKRI)
1 May 2016 to 31 Jan 2019

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Outside the quantum-technology scope of this portal (quantum-dot materials for light, energy or biology): the title names quantum science but no quantum technology. The record is kept for reference and left out of the default projects listing and counts.

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Project funded by UK Research and Innovation (UKRI) (EPSRC, Research Grant), research institution: LANCASTER UNIVERSITY. Award value (Gateway to Research): GBP 99,720, as stated by the source. Runs 2016-05-01 to 2019-01-31. Source: Gateway to Research (UK Research and Innovation) (national funding data, not CORDIS).

Original source.

Source: Gateway to Research (UK Research and Innovation), UK Research and Innovation (UKRI). Retrieved 2026-10-23. Licence: Open Government Licence v3.0; contains public sector information licensed under the Open Government Licence v3.0. Selected metadata, adapted presentation; the publisher's record is authoritative. No endorsement by the source is implied. Licence: Open Government Licence v3.0.

AI-assisted summary: The project titled 'Novel InSb quantum dots monolithically grown on silicon for low cost mid-infrared light emitting diodes' was funded by UK Research and Innovation with an award value of GBP 99,720. It was conducted by Lancaster University from May 1, 2016, to January 31, 2019. Suggested technology pillar: sensing. Generated by AI from the public source text; it may contain errors and the original source is authoritative.

Source: gtr.ukri.org · checked 23 Oct 2026 · AI-assisted summary