Physics and technology of Si1-xGex nanocrystals-based floating-gate flash memory with high-k tunneling/control dielectrics.

Project funded by Fundação para a Ciência e a Tecnologia, I.P. (FCT) (Concurso para Projectos de I&D em todos os Domínios Científicos - 2006), grant PTDC/FIS/70194/2006. Funded amount: EUR 61,961.70, as stated by the source. Runs 2007-09-01 to 2011-08-31. Keywords: Quantum dot flash memory, Si1-xGex nanocrystals, High-k dielectric materials, Carrier storage, Exact sciences, Exact sciences/Physical sciences. Source: OpenAIRE Graph, from the funder's project data (collected by OpenAIRE on 2026-07-23); national funding data, not CORDIS; selected because its keywords name quantum.

Original source.

Source: OpenAIRE Graph: projects of national funders, OpenAIRE, from the project data of Fundação para a Ciência e a Tecnologia, I.P. (FCT). Retrieved 2026-10-28. Licence: Creative Commons Attribution 4.0 (OpenAIRE Graph). Selected metadata, adapted presentation; the publisher's record is authoritative. No endorsement by the source is implied. Licence: Creative Commons Attribution 4.0 (CC BY 4.0).

AI-assisted summary: The project focuses on Si1-xGex nanocrystals-based floating-gate flash memory and is funded by Fundação para a Ciência e a Tecnologia with a grant of EUR 61,961.70, running from 2007 to 2011. Keywords include quantum dot flash memory and high-k dielectric materials. Suggested technology pillar: enabling. Generated by AI from the public source text; it may contain errors and the original source is authoritative.