Point and linear defect interaction study in hexagonal boron nitride

Operation co-funded by EU cohesion policy (European Social Fund (ESF)) under the programme EU Structural Funds Investments - LT - ERDF/ESF/CF/YEI (2014LT16MAOP001), managing authority: Finansų ministerija. The source names no beneficiary for this operation. Location: Vilnius County (NUTS LT011); Lithuania. Budget: total eligible expenditure EUR 2,816.33; EU co-financing EUR 2,816.33 (co-financing rate 100%), as stated by the source. Runs 2018-10-01 to 2019-04-30. Source: Kohesio, EU cohesion policy projects managed by national and regional authorities (not CORDIS); selected because its summary names quantum technology. Summary from Kohesio (English machine translation by the source): The project is designed to develop students’ skills through research during the semester. The project will investigate the interaction of spot and linear defects in hexagonal boron nitride (h-BN) using classical interaction potentials and molecular dynamics. the research and use of H-BN and other two-dimensional (2D) and layered materials in the next generation of electronics and optoelectronics devices is a major research topic. The recent discovery of single photon emissions from defects opens up opportunities to adapt h-BN to quantum computing, quantum communication and quantum metrology. Unfortunately, to date, there is a debate on the exact mechanism for the emission of h-BN single photons. Knowing this single photon emission mechanism, it would be possible to develop and optimise compact and efficient quantum optoelectronics devices. During chemical vapour deposition (CVD), the production of h-BN inevitably leads to point defects, dislocations, crystalline domain boundaries, and experimental results indicate quantum emissions in areas where these defects occur. During the project, the student will move to more complex h-BN systems modeling works, will acquire practical skills to work with molecular dynamic simulation programs and will acquire knowledge of the interactions between point and linear defects. These results will give important insights into existing effects in the research and allow us to move closer to the discovery of the quantum emission mechanism. The project will help the student to acquire more scientific knowledge and skills during his studies and to continue the work started in Lithuania.

Original source.

Source: Kohesio (EU cohesion policy projects), European Commission, Directorate-General for Regional and Urban Policy (DG REGIO). Retrieved 2026-10-21. Licence: CC0 1.0 (Cohesion Open Data Platform, dataset 2014-2020 Kohesio projects). Selected metadata, adapted presentation; the publisher's record is authoritative. No endorsement by the source is implied. Licence: public domain dedication (CC0 1.0).

AI-assisted summary: The project, co-funded by the EU, investigates the interaction of defects in hexagonal boron nitride (h-BN) using molecular dynamics. It aims to develop students' research skills and explores h-BN's applications in electronics and optoelectronics. Suggested technology pillar: enabling. Generated by AI from the public source text; it may contain errors and the original source is authoritative.