Two-Temperature Model - Molecular Dynamcis Simulations of Quantum Wells under Strongly Ionising Irradiation

Project funded by Fundação para a Ciência e a Tecnologia, I.P. (FCT) (FCT_CPCA_2020_01), grant CPCA/A2/7261/2020. Funded amount: EUR 1,727, as stated by the source. Runs 2021-01-01 to 2021-12-31. Keywords: Two-Temperature Model, Molecular Dynamics, Group-III Nitrides, Swift Heavy Ions, Quantum Wells, Exact sciences. Source: OpenAIRE Graph, from the funder's project data (collected by OpenAIRE on 2025-07-21); national funding data, not CORDIS. Abstract given by the source: The necessity of robust electronics working in extreme environments is driving the research on alternatives to the ubiquitous silicon-based devices. Group-III-nitride wide bandgap semiconductors are considered for the next generation of space electronics due to their remarkable thermal and chemical stability as well as radiation resistance. However, their response to strongly ionising radiation such as highly energetic heavy ions (in the following called swift heavy ions - SHI) is still poorly understood. These SHI make part of the intense radiation field in space and can cause considerable damage to electronic devices due to their high ionisation power and long-range. In a running project, NASIB, we are investigating the effect of SHI on III-nitride semiconductors combining experimental and computational techniques. In particular, a simulation scheme combining the thermodynamic Two-Temperature-Model with Molecular Dynamics simulations (TTM-MD) was shown to successfully predict radiation damage in GaN. In order to run MD cells of actual device structures and using more realistic cell sizes, more computation power is needed. Therefore, in this project, we propose to apply the developed modelling scheme to typical heterostructures used in III-N light-emitting diodes (LED) and lasers containing several InGaN quantum wells. The effects of SHI irradiation on the InGaN/GaN crystal and interfaces will be studied in detail and MD simulations will be compared to ongoing experiment

Original source.

Source: OpenAIRE Graph: projects of national funders, OpenAIRE, from the project data of Fundação para a Ciência e a Tecnologia, I.P. (FCT). Retrieved 2026-10-22. Licence: Creative Commons Attribution 4.0 (OpenAIRE Graph). Selected metadata, adapted presentation; the publisher's record is authoritative. No endorsement by the source is implied. Licence: Creative Commons Attribution 4.0 (CC BY 4.0).

AI-assisted summary: The project titled 'Two-Temperature Model - Molecular Dynamics Simulations of Quantum Wells under Strongly Ionising Irradiation' is funded by FCT with a grant of EUR 1,727, running from January 1 to December 31, 2021. It focuses on the effects of swift heavy ions on Group-III nitride semiconductors. Suggested technology pillar: simulation. Generated by AI from the public source text; it may contain errors and the original source is authoritative.